Quantum transport localization through graphene.
Nanotechnology
; 28(3): 035703, 2017 Jan 20.
Article
en En
| MEDLINE
| ID: mdl-27934780
ABSTRACT
Localization of atomic defect-induced electronic transport through a single graphene layer is calculated using a full-valence electronic structure description as a function of the defect density and taking into account the atomic-scale deformations of the layer. The elementary electronic destructive interferences leading to Anderson localization are analyzed. The low-voltage current intensity decreases with increasing length and defect density, with a calculated localization length ζ = 3.5 nm for a defect density of 5%. The difference from the experimental defect density of 0.5% required for an oxide surface-supported graphene to obtain the same ζ is discussed, pointing out how interactions of the graphene supporting surface and surface chemical modifications also control electronic transport localization.
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Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Nanotechnology
Año:
2017
Tipo del documento:
Article
País de afiliación:
Japón