Defects and Charge-Trapping Mechanisms of Double-Active-Layer In-Zn-O and Al-Sn-Zn-In-O Thin-Film Transistors.

Goh, Youngin; Kim, Taeho; Yang, Jong-Heon; Choi, Ji Hun; Hwang, Chi-Sun; Cho, Sung Haeng; Jeon, Sanghun

Goh, Youngin; Kim, Taeho; Yang, Jong-Heon; Choi, Ji Hun; Hwang, Chi-Sun; Cho, Sung Haeng; Jeon, Sanghun.

Afiliación

Goh Y; Department of Applied Physics, Korea University , 2511 Sejongro, Sejong 339-700, Republic of Korea.
Kim T; Department of Applied Physics, Korea University , 2511 Sejongro, Sejong 339-700, Republic of Korea.
Yang JH; Electronics and Telecommunications Research Institute , 218 Gajeong-dong, Yuseong-gu, Daejeon 305-700, Republic of Korea.
Choi JH; Electronics and Telecommunications Research Institute , 218 Gajeong-dong, Yuseong-gu, Daejeon 305-700, Republic of Korea.
Hwang CS; Electronics and Telecommunications Research Institute , 218 Gajeong-dong, Yuseong-gu, Daejeon 305-700, Republic of Korea.
Cho SH; Electronics and Telecommunications Research Institute , 218 Gajeong-dong, Yuseong-gu, Daejeon 305-700, Republic of Korea.
Jeon S; Department of Applied Physics, Korea University , 2511 Sejongro, Sejong 339-700, Republic of Korea.

ACS Appl Mater Interfaces ; 9(11): 9271-9279, 2017 Mar 22.

Article en En | MEDLINE | ID: mdl-28252929

Palabras clave

Al−Sn−Zn−In−O; charge trapping; defect density; double active layer; negative oxygen ion effect; oxide semiconductor; thin-film transistor

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2017 Tipo del documento: Article Pais de publicación: Estados Unidos

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google