Observation of Room-Temperature Magnetoresistance in Monolayer MoS<sub>2</sub> by Ferromagnetic Gating.

Jie, Wenjing; Yang, Zhibin; Zhang, Fan; Bai, Gongxun; Leung, Chi Wah; Hao, Jianhua

Observation of Room-Temperature Magnetoresistance in Monolayer MoS₂ by Ferromagnetic Gating.

Jie, Wenjing; Yang, Zhibin; Zhang, Fan; Bai, Gongxun; Leung, Chi Wah; Hao, Jianhua.

Afiliación

Jie W; Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong, China.
Yang Z; College of Chemistry and Materials Science, Sichuan Normal University , Chengdu 610068, China.
Zhang F; Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong, China.
Bai G; Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong, China.
Leung CW; Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong, China.
Hao J; Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong, China.

ACS Nano ; 11(7): 6950-6958, 2017 07 25.

Article en En | MEDLINE | ID: mdl-28686411

Palabras clave

CoFe2O4; heterostructures; magnetoresistance; monolayer MoS2; wafer-scale

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2017 Tipo del documento: Article País de afiliación: China