Ta2O5-TiO2 Composite Charge-trapping Dielectric for the Application of the Nonvolatile Memory.

Wei, C Y; Shen, B; Ding, P; Han, P; Li, A D; Xia, Y D; Xu, B; Yin, J; Liu, Z G

Ta₂O₅-TiO₂ Composite Charge-trapping Dielectric for the Application of the Nonvolatile Memory.

Wei, C Y; Shen, B; Ding, P; Han, P; Li, A D; Xia, Y D; Xu, B; Yin, J; Liu, Z G.

Afiliación

Wei CY; Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China.
Shen B; National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
Ding P; Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China.
Han P; National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
Li AD; Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China.
Xia YD; National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
Xu B; Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China.
Yin J; National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
Liu ZG; Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China.

Sci Rep ; 7(1): 5988, 2017 07 20.

Article en En | MEDLINE | ID: mdl-28729693

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2017 Tipo del documento: Article País de afiliación: China