Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO<sub>2</sub>.

Gasvoda, Ryan J; van de Steeg, Alex W; Bhowmick, Ranadeep; Hudson, Eric A; Agarwal, Sumit

Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO₂.

Gasvoda, Ryan J; van de Steeg, Alex W; Bhowmick, Ranadeep; Hudson, Eric A; Agarwal, Sumit.

Afiliación

Gasvoda RJ; Department of Chemical and Biological Engineering, Colorado School of Mines , 1613 Illinois Street, Golden, Colorado 80401, United States.
van de Steeg AW; Applied Physics Department, Eindhoven University of Technology , P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
Bhowmick R; Lam Research Corporation , 4650 Cushing Parkway, Fremont, California 94538, United States.
Hudson EA; Lam Research Corporation , 4650 Cushing Parkway, Fremont, California 94538, United States.
Agarwal S; Department of Chemical and Biological Engineering, Colorado School of Mines , 1613 Illinois Street, Golden, Colorado 80401, United States.

ACS Appl Mater Interfaces ; 9(36): 31067-31075, 2017 Sep 13.

Article en En | MEDLINE | ID: mdl-28796486

Palabras clave

atomic layer etching; ellipsometry; infrared spectroscopy; interface engineering; plasma processing

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2017 Tipo del documento: Article País de afiliación: Estados Unidos

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