Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements.
Materials (Basel)
; 5(6): 1005-1032, 2012 Jun 01.
Article
en En
| MEDLINE
| ID: mdl-28817021
ABSTRACT
In capacitance-voltage (C-V) measurements, frequency dispersion in high-k dielectrics is often observed. The frequency dependence of the dielectric constant (k-value), that is the intrinsic frequency dispersion, could not be assessed before suppressing the effects of extrinsic frequency dispersion, such as the effects of the lossy interfacial layer (between the high-k thin film and silicon substrate) and the parasitic effects. The effect of the lossy interfacial layer on frequency dispersion was investigated and modeled based on a dual frequency technique. The significance of parasitic effects (including series resistance and the back metal contact of the metal-oxide-semiconductor (MOS) capacitor) on frequency dispersion was also studied. The effect of surface roughness on frequency dispersion is also discussed. After taking extrinsic frequency dispersion into account, the relaxation behavior can be modeled using the Curie-von Schweidler (CS) law, the Kohlrausch-Williams-Watts (KWW) relationship and the Havriliak-Negami (HN) relationship. Dielectric relaxation mechanisms are also discussed.
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1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Materials (Basel)
Año:
2012
Tipo del documento:
Article
País de afiliación:
China