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Strain Engineering a 4a×√3a Charge Density Wave Phase in Transition Metal Dichalcogenide 1T-VSe2.
Zhang, Duming; Ha, Jeonghoon; Baek, Hongwoo; Chan, Yang-Hao; Natterer, Fabian D; Myers, Alline F; Schumacher, Joshua D; Cullen, William G; Davydov, Albert V; Kuk, Young; Chou, M Y; Zhitenev, Nikolai B; Stroscio, Joseph A.
Afiliación
  • Zhang D; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
  • Ha J; Maryland NanoCenter, University of Maryland, College Park, MD 20742, USA.
  • Baek H; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
  • Chan YH; Maryland NanoCenter, University of Maryland, College Park, MD 20742, USA.
  • Natterer FD; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
  • Myers AF; Department of Physics and Astronomy, Seoul National University, Seoul, 151-747, Korea.
  • Schumacher JD; Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
  • Cullen WG; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
  • Davydov AV; École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
  • Kuk Y; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
  • Chou MY; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
  • Zhitenev NB; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
  • Stroscio JA; Maryland NanoCenter, University of Maryland, College Park, MD 20742, USA.
Phys Rev Mater ; 1(2)2017 Jul.
Article en En | MEDLINE | ID: mdl-28890947
ABSTRACT
We report a rectangular charge density wave (CDW) phase in strained 1T-VSe2 thin films synthesized by molecular beam epitaxy on c-sapphire substrates. The observed CDW structure exhibits an unconventional rectangular 4a×√3a periodicity, as opposed to the previously reported hexagonal 4a×4a structure in bulk crystals and exfoliated thin layered samples. Tunneling spectroscopy shows a strong modulation of the local density of states of the same 4a×√3a CDW periodicity and an energy gap of 2ΔCDW = (9.1 ± 0.1) meV. The CDW energy gap evolves into a full gap at temperatures below 500 mK, indicating a transition to an insulating phase at ultra-low temperatures. First-principles calculations confirm the stability of both 4a×4a and 4a×√3a structures arising from soft modes in the phonon dispersion. The unconventional structure becomes preferred in the presence of strain, in agreement with experimental findings.

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Mater Año: 2017 Tipo del documento: Article País de afiliación: Estados Unidos

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Mater Año: 2017 Tipo del documento: Article País de afiliación: Estados Unidos