Enhanced photoluminescence from ring resonators in hydrogenated amorphous silicon thin films at telecommunications wavelengths.
Opt Lett
; 42(21): 4239-4242, 2017 Nov 01.
Article
en En
| MEDLINE
| ID: mdl-29088133
ABSTRACT
We report enhanced photoluminescence in the telecommunications wavelength range in ring resonators patterned in hydrogenated amorphous silicon thin films deposited via low-temperature plasma enhanced chemical vapor deposition. The thin films exhibit broadband photoluminescence that is enhanced by up to 5 dB by the resonant modes of the ring resonators due to the Purcell effect. Ellipsometry measurements of the thin films show a refractive index comparable to crystalline silicon and an extinction coefficient on the order of 0.001 from 1300 nm to 1600 nm wavelengths. The results are promising for chip-scale integrated optical light sources.
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MEDLINE
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Opt Lett
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2017
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Article
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EEUU
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ESTADOS UNIDOS
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ESTADOS UNIDOS DA AMERICA
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EUA
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UNITED STATES
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UNITED STATES OF AMERICA
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USA