Investigation of (Leaky) ALD TiO2 Protection Layers for Water-Splitting Photoelectrodes.
ACS Appl Mater Interfaces
; 9(50): 43614-43622, 2017 Dec 20.
Article
en En
| MEDLINE
| ID: mdl-29190064
ABSTRACT
Protective overlayers for light absorbers in photoelectrochemical water-splitting devices have gained considerable attention in recent years. They stabilize light absorbers which would normally be prone to chemical side reactions leading to degradation of the absorber. Atomic layer deposition (ALD) enables conformal and reproducible ultrathin protective layer growth even on highly structured substrates. One of the most widely investigated protective layers is amorphous TiO2, deposited by ALD at a relatively low temperature (120-150 °C). We have deposited protective layers from tetrakis(dimethylamido)titanium(IV) at two different temperatures and investigated their chemical composition as well as optical and electrochemical properties. Our main findings reveal a change in the flat band potential with thickness, reaching a stable value of about -50 to -100 mV versus reversible hydrogen electrode for films >30 nm, with doping densities of â¼1020 cm3. Practical thicknesses to achieve pinhole-free films are evaluated and discussed.
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1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
ACS Appl Mater Interfaces
Asunto de la revista:
BIOTECNOLOGIA
/
ENGENHARIA BIOMEDICA
Año:
2017
Tipo del documento:
Article
País de afiliación:
Suiza