STM patterned nanowire measurements using photolithographically defined implants in Si(100).

Ramanayaka, A N; Kim, Hyun-Soo; Tang, Ke; Wang, X; Silver, R M; Stewart, M D; Pomeroy, J M

Ramanayaka, A N; Kim, Hyun-Soo; Tang, Ke; Wang, X; Silver, R M; Stewart, M D; Pomeroy, J M.

Afiliación

Ramanayaka AN; National Institute of Standards & Technology, Gaithersburg, Maryland, 20899, USA. aruna.ramanayaka@nist.gov.
Kim HS; National Institute of Standards & Technology, Gaithersburg, Maryland, 20899, USA.
Tang K; Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland, 20742, USA.
Wang X; National Institute of Standards & Technology, Gaithersburg, Maryland, 20899, USA.
Silver RM; Department of Materials Science and Engineering, University of Maryland, College Park, Maryland, 20742, USA.
Stewart MD; National Institute of Standards & Technology, Gaithersburg, Maryland, 20899, USA.
Pomeroy JM; Chemical Physics Program, University of Maryland, College Park, Maryland, 20742, USA.

Sci Rep ; 8(1): 1790, 2018 01 29.

Article en En | MEDLINE | ID: mdl-29379057

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2018 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Reino Unido

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