Investigation of regime switching from mode locking to Q-switching in a 2 µm InGaSb/AlGaAsSb quantum well laser.
Opt Express
; 26(7): 8289-8295, 2018 Apr 02.
Article
en En
| MEDLINE
| ID: mdl-29715797
ABSTRACT
A two-section InGaSb/AlGaAsSb single quantum well (SQW) laser emitting at 2 µm is presented. By varying the absorber bias voltage with a fixed gain current at 130 mA, passive mode locking at ~18.40 GHz, Q-switched mode locking, and passive Q-switching are observed in this laser. In the Q-switched mode locking regimes, the Q-switched RF signal and mode locked RF signal coexist, and the Q-switched lasing and mode-locked lasing happen at different wavelengths. This is the first observation of these three pulsed working regimes in a GaSb-based diode laser. An analysis of the regime switching mechanism is given based on the interplay between the gain saturation and the saturable absorption.
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Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Opt Express
Asunto de la revista:
OFTALMOLOGIA
Año:
2018
Tipo del documento:
Article