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Anisotropic polarization-induced conductance at a ferroelectric-insulator interface.
Zhang, Yi; Lu, Haidong; Xie, Lin; Yan, Xingxu; Paudel, Tula R; Kim, Jeongwoo; Cheng, Xiaoxing; Wang, Hui; Heikes, Colin; Li, Linze; Xu, Mingjie; Schlom, Darrell G; Chen, Long-Qing; Wu, Ruqian; Tsymbal, Evgeny Y; Gruverman, Alexei; Pan, Xiaoqing.
Afiliación
  • Zhang Y; Department of Materials Science and Engineering, University of California, Irvine, CA, USA.
  • Lu H; Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, USA.
  • Xie L; National Laboratory of Solid State Microstructures and College of Engineering and Applied Sciences, Nanjing University, Nanjing, Jiangsu, China.
  • Yan X; Department of Materials Science and Engineering, University of California, Irvine, CA, USA.
  • Paudel TR; Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, USA.
  • Kim J; Department of Physics and Astronomy, University of California, Irvine, CA, USA.
  • Cheng X; Department of Materials Science and Engineering, Penn State University, University Park, PA, USA.
  • Wang H; Department of Physics and Astronomy, University of California, Irvine, CA, USA.
  • Heikes C; Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.
  • Li L; Department of Materials Science and Engineering, University of California, Irvine, CA, USA.
  • Xu M; Department of Materials Science and Engineering, University of California, Irvine, CA, USA.
  • Schlom DG; Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.
  • Chen LQ; Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA.
  • Wu R; Department of Materials Science and Engineering, Penn State University, University Park, PA, USA.
  • Tsymbal EY; Department of Physics and Astronomy, University of California, Irvine, CA, USA.
  • Gruverman A; Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, USA.
  • Pan X; Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, USA. agruverman2@unl.edu.
Nat Nanotechnol ; 13(12): 1132-1136, 2018 12.
Article en En | MEDLINE | ID: mdl-30250247
ABSTRACT
Coupling between different degrees of freedom, that is, charge, spin, orbital and lattice, is responsible for emergent phenomena in complex oxide heterostrutures1,2. One example is the formation of a two-dimensional electron gas (2DEG) at the polar/non-polar LaAlO3/SrTiO3 (LAO/STO)3-7 interface. This is caused by the polar discontinuity and counteracts the electrostatic potential build-up across the LAO film3. The ferroelectric polarization at a ferroelectric/insulator interface can also give rise to a polar discontinuity8-10. Depending on the polarization orientation, either electrons or holes are transferred to the interface, to form either a 2DEG or two-dimensional hole gas (2DHG)11-13. While recent first-principles modelling predicts the formation of 2DEGs at the ferroelectric/insulator interfaces9,10,12-14, experimental evidence of a ferroelectrically induced interfacial 2DEG remains elusive. Here, we report the emergence of strongly anisotropic polarization-induced conductivity at a ferroelectric/insulator interface, which shows a strong dependence on the polarization orientation. By probing the local conductance and ferroelectric polarization over a cross-section of a BiFeO3-TbScO3 (BFO/TSO) (001) heterostructure, we demonstrate that this interface is conducting along the 109° domain stripes in BFO, whereas it is insulating in the direction perpendicular to these domain stripes. Electron energy-loss spectroscopy and theoretical modelling suggest that the anisotropy of the interfacial conduction is caused by an alternating polarization associated with the ferroelectric domains, producing either electron or hole doping of the BFO/TSO interface.

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nat Nanotechnol Año: 2018 Tipo del documento: Article País de afiliación: Estados Unidos

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nat Nanotechnol Año: 2018 Tipo del documento: Article País de afiliación: Estados Unidos