Spin-Orbit-Torque Memory Operation of Synthetic Antiferromagnets.
Phys Rev Lett
; 121(16): 167202, 2018 Oct 19.
Article
en En
| MEDLINE
| ID: mdl-30387670
ABSTRACT
In this Letter, we show the demonstration of a sequential antiferromagnetic memory operation with a spin-orbit-torque write, by the spin Hall effect, and a resistive read in the CoGd synthetic antiferromagnetic bits, in which we reveal the distinct differences in the spin-orbit-torque and field-induced switching mechanisms of the antiferromagnetic moment, or the Néel vector. In addition to the comprehensive spin torque memory operation, our thorough investigations also highlight the high immunity to a field disturbance as well as a memristive behavior of the antiferromagnetic bits.
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01-internacional
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MEDLINE
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En
Revista:
Phys Rev Lett
Año:
2018
Tipo del documento:
Article
País de afiliación:
Japón