Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe<sub>2</sub> Heterostructure.

Na, Junhong; Kim, Youngwook; Smet, Jurgen H; Burghard, Marko; Kern, Klaus

Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe₂ Heterostructure.

Na, Junhong; Kim, Youngwook; Smet, Jurgen H; Burghard, Marko; Kern, Klaus.

Afiliación

Na J; Max Planck Institute for Solid State Research , Heisenbergstrasse 1 , D-70569 Stuttgart , Germany.
Kim Y; Department of Energy Science , Sungkyunkwan University , 16419 Suwon , Republic of Korea.
Smet JH; Max Planck Institute for Solid State Research , Heisenbergstrasse 1 , D-70569 Stuttgart , Germany.
Burghard M; Max Planck Institute for Solid State Research , Heisenbergstrasse 1 , D-70569 Stuttgart , Germany.
Kern K; Max Planck Institute for Solid State Research , Heisenbergstrasse 1 , D-70569 Stuttgart , Germany.

ACS Appl Mater Interfaces ; 11(23): 20973-20978, 2019 Jun 12.

Article en En | MEDLINE | ID: mdl-31145585

Palabras clave

2D van der Waals heterostructure; black phosphorus; negative differential resistance; tin diselenide; tunneling transistor

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2019 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Estados Unidos

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google