Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors.
Nanomaterials (Basel)
; 9(6)2019 Jun 14.
Article
en En
| MEDLINE
| ID: mdl-31207877
ABSTRACT
The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS2), a transition metal dichalcogenides semiconductor, is considered an auspicious candidate for the post-silicon era due to its outstanding chemical and thermal stability. We present a Kelvin probe force microscopy (KPFM) study of a MoS2 FET device, showing direct evidence for pinch-off formation in the channel by in situ monitoring of the electrostatic potential distribution along the conducting channel of the transistor. In addition, we present a systematic comparison between a monolayer MoS2 FET and a few-layer MoS2 FET regarding gating effects, electric field distribution, depletion region, and pinch-off formation in such devices.
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1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Nanomaterials (Basel)
Año:
2019
Tipo del documento:
Article
País de afiliación:
Israel