High-Performance Ultra-Short Channel Field-Effect Transistor Using Solution-Processable Colloidal Nanocrystals.
J Phys Chem Lett
; 10(14): 4025-4031, 2019 Jul 18.
Article
en En
| MEDLINE
| ID: mdl-31259561
ABSTRACT
We demonstrate high-mobility solution-processed inorganic field-effect transistors (FETs) with ultra-short channel (USC) length using semiconductor CdSe nanocrystals (NCs). Capping of the NCs with hybrid inorganic-organic CdCl3--butylamine ligands enables coarsening of the NCs during annealing at a moderate temperature, resulting in the devices having good transport characteristics with electron mobilities in the saturation regime reaching 8 cm2 V-1 s-1. Solution-based processing of the NCs and fabrication of thin films involve neither harsh conditions nor the use of hydrazine. Employing photolithographic methods, we fabricated FETs with a vertical overlap of source and drain electrodes to achieve a submicrometer channel length. To the best of our knowledge, this is the first report on an USC FET based on colloidal semiconductor NCs. Because of a short channel length, the FETs show a normalized transconductance of 4.2 m V-1 s-1 with a high on/off ratio of 105.
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1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
J Phys Chem Lett
Año:
2019
Tipo del documento:
Article
País de afiliación:
Alemania