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Volume Shrinkage-Induced Voiding Mechanism During Electromigration of Cu/Ni/Sn-Ag Microbump.
Son, Kirak; Park, Gyu-Tae; Lee, Byeong-Rok; Park, Young-Bae.
Afiliación
  • Son K; School of Materials Science and Engineering, Andong National University, Andong-si 36729, Korea.
  • Park GT; Amkor Technology Korea Inc., Gwangju 61006, Korea.
  • Lee BR; STATS ChipPAC Korea Ltd., Incheon 22379, Korea.
  • Park YB; School of Materials Science and Engineering, Andong National University, Andong-si 36729, Korea.
J Nanosci Nanotechnol ; 20(1): 278-284, 2020 01 01.
Article en En | MEDLINE | ID: mdl-31383167
ABSTRACT
The effects of annealing, electromigration, and thermomigration on volume shrinkage and voiding mechanisms of Cu/Ni/Sn-2.5Ag microbumps are systematically investigated by using in-situ scanning electron microscopy under current stressing of 1.5×105 A/cm² at 150 °C. The resistance increases rapidly in the initial stage due to formation of intermetallic compounds (IMC)s followed by a gradual increase in resistance. Growth of Ni3Sn4 IMCs is controlled by a diffusion-dominant mechanism, and voids and volume shrinkage are closely related to IMC phase transformation of (Au, Ni)Sn4 to Ni3Sn4 in microbumps.

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Año: 2020 Tipo del documento: Article

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Año: 2020 Tipo del documento: Article