Effects of Dielectric Material, HMDS Layer, and Channel Length on the Performance of the Perylenediimide-Based Organic Field-Effect Transistors.

Vasimalla, Suresh; Subbarao, Nimmakayala V V; Gedda, Murali; Goswami, Dipak K; Iyer, Parameswar Krishnan

Vasimalla, Suresh; Subbarao, Nimmakayala V V; Gedda, Murali; Goswami, Dipak K; Iyer, Parameswar Krishnan.

Afiliación

Vasimalla S; Department of Chemistry, Centre for Nanotechnology, and Department of Physics, Indian Institute of Technology Guwahati, 781039 Guwahati, Assam, India.
Subbarao NVV; Department of Chemistry, Centre for Nanotechnology, and Department of Physics, Indian Institute of Technology Guwahati, 781039 Guwahati, Assam, India.
Gedda M; Department of Chemistry, Centre for Nanotechnology, and Department of Physics, Indian Institute of Technology Guwahati, 781039 Guwahati, Assam, India.
Goswami DK; Department of Chemistry, Centre for Nanotechnology, and Department of Physics, Indian Institute of Technology Guwahati, 781039 Guwahati, Assam, India.
Iyer PK; Department of Chemistry, Centre for Nanotechnology, and Department of Physics, Indian Institute of Technology Guwahati, 781039 Guwahati, Assam, India.

ACS Omega ; 2(6): 2552-2560, 2017 Jun 30.

Article en En | MEDLINE | ID: mdl-31457599

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Omega Año: 2017 Tipo del documento: Article País de afiliación: India Pais de publicación: Estados Unidos

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