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Anisotropic Growth and Scanning Tunneling Microscopy Identification of Ultrathin Even-Layered PdSe2 Ribbons.
Jiang, Shaolong; Xie, Chunyu; Gu, Yue; Zhang, Qinghua; Wu, Xianxin; Sun, Yilin; Li, Wei; Shi, Yuping; Zhao, Liyun; Pan, Shuangyuan; Yang, Pengfei; Huan, Yahuan; Xie, Dan; Zhang, Qing; Liu, Xinfeng; Zou, Xiaolong; Gu, Lin; Zhang, Yanfeng.
Afiliación
  • Jiang S; Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China.
  • Xie C; Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China.
  • Gu Y; Shenzhen Geim Graphene Center and Low-Dimensional Materials and Devices Laboratory, Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, 518055, P. R. China.
  • Zhang Q; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
  • Wu X; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
  • Sun Y; Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
  • Li W; Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, P. R. China.
  • Shi Y; Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China.
  • Zhao L; Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China.
  • Pan S; Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China.
  • Yang P; Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China.
  • Huan Y; Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China.
  • Xie D; Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China.
  • Zhang Q; Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, P. R. China.
  • Liu X; Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China.
  • Zou X; Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
  • Gu L; Shenzhen Geim Graphene Center and Low-Dimensional Materials and Devices Laboratory, Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, 518055, P. R. China.
  • Zhang Y; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
Small ; 15(45): e1902789, 2019 Nov.
Article en En | MEDLINE | ID: mdl-31544354
Palladium diselenide (PdSe2 ) is an emerging 2D layered material with anisotropic optical/electrical properties, extra-high carrier mobility, excellent air stability, etc. So far, ultrathin PdSe2 is mainly achieved via mechanical exfoliation from its bulk counterpart, and the direct synthesis is still challenging. Herein, the synthesis of ultrathin 2D PdSe2 on conductive Au foil substrates via a facile chemical vapor deposition route is reported. Intriguingly, an anisotropic growth behavior is detected from the evolution of ribboned flakes with large length/width ratios, which is well explained from the orthorhombic symmetry of PdSe2 . A unique even-layered growth mode from 2 to 20 layers is also confirmed by the perfect combination of onsite scanning tunneling microscopy characterizations, through deliberately scratching the flake edge to expose both even and odd layers. This even-layered, ribboned 2D material is expected to serve as a perfect platform for exploring unique physical properties, and for developing high-performance electronic and optoelectronic devices.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Diagnostic_studies Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2019 Tipo del documento: Article Pais de publicación: Alemania

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Diagnostic_studies Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2019 Tipo del documento: Article Pais de publicación: Alemania