A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure.

Sun, Zhonghao; Huang, Huolin; Sun, Nan; Tao, Pengcheng; Zhao, Cezhou; Liang, Yung C

Sun, Zhonghao; Huang, Huolin; Sun, Nan; Tao, Pengcheng; Zhao, Cezhou; Liang, Yung C.

Afiliación

Sun Z; School of Optoelectronic Engineering and Instrumentation Science & School of Microelectronics, Dalian University of Technology, Dalian 116024, China.
Huang H; School of Optoelectronic Engineering and Instrumentation Science & School of Microelectronics, Dalian University of Technology, Dalian 116024, China.
Sun N; School of Optoelectronic Engineering and Instrumentation Science & School of Microelectronics, Dalian University of Technology, Dalian 116024, China.
Tao P; School of Optoelectronic Engineering and Instrumentation Science & School of Microelectronics, Dalian University of Technology, Dalian 116024, China.
Zhao C; Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China.
Liang YC; Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260, Singapore.

Micromachines (Basel) ; 10(12)2019 Dec 05.

Article en En | MEDLINE | ID: mdl-31817374

Palabras clave

gallium nitride; high electron mobility transistors; normally-off operation; vertical gate structure; wide-bandgap semiconductor

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2019 Tipo del documento: Article País de afiliación: China

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