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Engineering of self-rectifying filamentary resistive switching in LiNbO3 single crystalline thin film via strain doping.
You, Tiangui; Huang, Kai; Zhao, Xiaomeng; Yi, Ailun; Chen, Chen; Ren, Wei; Jin, Tingting; Lin, Jiajie; Shuai, Yao; Luo, Wenbo; Zhou, Min; Yu, Wenjie; Ou, Xin.
Afiliación
  • You T; State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.
  • Huang K; State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.
  • Zhao X; State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.
  • Yi A; State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.
  • Chen C; Department of Physics, Shanghai University, Shanghai, 200444, P. R. China.
  • Ren W; Department of Physics, Shanghai University, Shanghai, 200444, P. R. China.
  • Jin T; State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.
  • Lin J; State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.
  • Shuai Y; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Luo W; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Zhou M; State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.
  • Yu W; State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.
  • Ou X; State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China. ouxin@mail.sim.ac.cn.
Sci Rep ; 9(1): 19134, 2019 Dec 13.
Article en En | MEDLINE | ID: mdl-31836794
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Sci Rep Año: 2019 Tipo del documento: Article Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Sci Rep Año: 2019 Tipo del documento: Article Pais de publicación: Reino Unido