Monolithically Integrated Enhancement-Mode and Depletion-Mode ß-Ga<sub>2</sub>O<sub>3</sub> MESFETs with Graphene-Gate Architectures and Their Logic Applications.

Kim, Janghyuk; Kim, Jihyun

Monolithically Integrated Enhancement-Mode and Depletion-Mode ß-Ga₂O₃ MESFETs with Graphene-Gate Architectures and Their Logic Applications.

Kim, Janghyuk; Kim, Jihyun.

Afiliación

Kim J; Department of Chemical and Biological Engineering , Korea University , Seoul 02841 , South Korea.
Kim J; Department of Chemical and Biological Engineering , Korea University , Seoul 02841 , South Korea.

ACS Appl Mater Interfaces ; 12(6): 7310-7316, 2020 Feb 12.

Article en En | MEDLINE | ID: mdl-31898449

Palabras clave

depletion-mode FET; enhancement-mode FET; gallium oxide; two-dimensional material; ultrawide band gap

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2020 Tipo del documento: Article País de afiliación: Corea del Sur

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