Contact engineering of single core/shell SiC/SiO<sub>2</sub> nanowire memory unit with high current tolerance using focused femtosecond laser irradiation.

Lin, Luchan; Huo, Jinpeng; Peng, Peng; Zou, Guisheng; Liu, Lei; Duley, Walt W; Zhou, Y Norman

Contact engineering of single core/shell SiC/SiO₂ nanowire memory unit with high current tolerance using focused femtosecond laser irradiation.

Lin, Luchan; Huo, Jinpeng; Peng, Peng; Zou, Guisheng; Liu, Lei; Duley, Walt W; Zhou, Y Norman.

Afiliación

Lin L; Department of Mechanical Engineering, Tsinghua University, Beijing 100084, P.R. China. luchan.lin@empa.ch liulei@tsinghua.edu.cn and Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland.
Huo J; Department of Mechanical Engineering, Tsinghua University, Beijing 100084, P.R. China. luchan.lin@empa.ch liulei@tsinghua.edu.cn.
Peng P; School of Mechanical Engineering and Automation, Beihang University, Beijing 100191, P.R. China.
Zou G; Department of Mechanical Engineering, Tsinghua University, Beijing 100084, P.R. China. luchan.lin@empa.ch liulei@tsinghua.edu.cn.
Liu L; Department of Mechanical Engineering, Tsinghua University, Beijing 100084, P.R. China. luchan.lin@empa.ch liulei@tsinghua.edu.cn.
Duley WW; Department of Physics and Astronomy, University of Waterloo, Waterloo N2L 3G1, Canada.
Zhou YN; Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo N2L 3G1, Canada.

Nanoscale ; 12(9): 5618-5626, 2020 Mar 05.

Article en En | MEDLINE | ID: mdl-32100779

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2020 Tipo del documento: Article País de afiliación: Suiza