Threshold Voltage Variations Induced by Si1-xGex and Si1-xCx of Sub 5-nm Node Silicon Nanosheet Field-Effect Transistors.

Jeong, Jinsu; Yoon, Jun-Sik; Lee, Seunghwan; Baek, Rock-Hyun

Threshold Voltage Variations Induced by Si_1-xGe_x and Si_1-xC_x of Sub 5-nm Node Silicon Nanosheet Field-Effect Transistors.

Jeong, Jinsu; Yoon, Jun-Sik; Lee, Seunghwan; Baek, Rock-Hyun.

Afiliación

Jeong J; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
Yoon JS; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
Lee S; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
Baek RH; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.

J Nanosci Nanotechnol ; 20(8): 4684-4689, 2020 Aug 01.

Article en En | MEDLINE | ID: mdl-32126641

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Año: 2020 Tipo del documento: Article Pais de publicación: Estados Unidos

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