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Giant Thickness-Tunable Bandgap and Robust Air Stability of 2D Palladium Diselenide.
Xie, Chunyu; Jiang, Shaolong; Gao, Yinlu; Hong, Min; Pan, Shuangyuan; Zhao, Jijun; Zhang, Yanfeng.
Afiliación
  • Xie C; Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China.
  • Jiang S; Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China.
  • Gao Y; Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian, 116024, China.
  • Hong M; Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China.
  • Pan S; Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China.
  • Zhao J; Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian, 116024, China.
  • Zhang Y; Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China.
Small ; 16(19): e2000754, 2020 May.
Article en En | MEDLINE | ID: mdl-32285616
ABSTRACT
Uncovering the thickness-dependent electronic property and environmental stability for 2D materials are crucial issues for promoting their applications in high-performance electronic and optoelectronic devices. Herein, the extrahigh air stability and giant tunable electronic bandgap of chemical vapor deposition (CVD)-derived few-layer PdSe2 on Au foils, by using scanning tunneling microscope/spectroscopy (STM/STS), are reported. The robust stability of 2D PdSe2 is uncovered by the observation of nearly defect/adsorption-free atomic lattices on long-time air-exposed samples. A one-to-one correspondence between the electronic bandgap (from ≈1.15 to ≈0 eV) and thickness of PdSe2 /Au (from bilayer to bulk) is established. It is also revealed that few-layer semiconducting PdSe2 flakes present zero-gap edges, induced by hybridization of Pd 4d and Se 4p orbitals. This work hereby provides straightforward evidence for the thickness-tunable electronic property and air stability of 2D semiconductors, thus shedding light on their applications in next-generation electronic devices.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2020 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2020 Tipo del documento: Article País de afiliación: China