Optoelectronic Properties of Monolayer Hexagonal Boron Nitride on Different Substrates Measured by Terahertz Time-Domain Spectroscopy.

Bilal, Muhammad; Xu, Wen; Wang, Chao; Wen, Hua; Zhao, Xinnian; Song, Dan; Ding, Lan

Bilal, Muhammad; Xu, Wen; Wang, Chao; Wen, Hua; Zhao, Xinnian; Song, Dan; Ding, Lan.

Afiliación

Bilal M; Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China.
Xu W; Key Laboratory of Materials Physics, Institute of Solid State Physics, University of Science and Technology of China, Hefei 230026, China.
Wang C; Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China.
Wen H; School of Physics and Astronomy and Yunnan Key Laboratory for Quantum Information, Yunnan University, Kunming 650091, China.
Zhao X; Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China.
Song D; Key Laboratory of Materials Physics, Institute of Solid State Physics, University of Science and Technology of China, Hefei 230026, China.
Ding L; Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China.

Nanomaterials (Basel) ; 10(4)2020 Apr 16.

Article en En | MEDLINE | ID: mdl-32316131

Palabras clave

chemical vapor deposition; hexagonal boron nitride; monolayer; terahertz; time domain spectroscopy

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2020 Tipo del documento: Article País de afiliación: China Pais de publicación: Suiza

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