Thermoelectric Properties of Bismuth Telluride Thin Films Electrodeposited from a Nonaqueous Solution.
ACS Omega
; 5(24): 14679-14688, 2020 Jun 23.
Article
en En
| MEDLINE
| ID: mdl-32596605
ABSTRACT
We report the thermoelectric properties of Bi2Te3 thin films electrodeposited from the weakly coordinating solvent dichloromethane (CH2Cl2). It was found that the oxidation of porous films is significant, causing the degradation of its thermoelectric properties. We show that the morphology of the film can be improved drastically by applying a short initial nucleation pulse, which generates a large number of nuclei, and then growing the nuclei by pulsed electrodeposition at a much lower overpotential. This significantly reduces the oxidation of the films as smooth films have a smaller surface-to-volume ratio and are less prone to oxidation. X-ray photoelectron spectroscopy (XPS) shows that those films with Te(O) termination show a complete absence of oxygen below the surface layer. A thin film transfer process was developed using polystyrene as a carrier polymer to transfer the films from the conductive TiN to an insulating layer for thermoelectrical characterization. Temperature-dependent Seebeck measurements revealed a room-temperature coefficient of -51.7 µV/K growing to nearly -100 µV/K at 520 °C. The corresponding power factor reaches a value of 88.2 µW/mK2 at that temperature.
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Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
ACS Omega
Año:
2020
Tipo del documento:
Article
País de afiliación:
Reino Unido