Direct comparison of ferroelectric properties in Hf0.5Zr0.5O2 between thermal and plasma-enhanced atomic layer deposition.

Hur, Jae; Tasneem, Nujhat; Choe, Gihun; Wang, Panni; Wang, Zheng; Khan, Asif Islam; Yu, Shimeng

Direct comparison of ferroelectric properties in Hf_0.5Zr_0.5O₂ between thermal and plasma-enhanced atomic layer deposition.

Hur, Jae; Tasneem, Nujhat; Choe, Gihun; Wang, Panni; Wang, Zheng; Khan, Asif Islam; Yu, Shimeng.

Afiliación

Hur J; School of Electrical and Computing Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States of America.
Tasneem N; School of Electrical and Computing Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States of America.
Choe G; School of Electrical and Computing Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States of America.
Wang P; School of Electrical and Computing Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States of America.
Wang Z; School of Electrical and Computing Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States of America.
Khan AI; School of Electrical and Computing Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States of America.
Yu S; School of Electrical and Computing Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States of America.

Nanotechnology ; 31(50): 505707, 2020 Dec 11.

Article en En | MEDLINE | ID: mdl-32663805

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2020 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Reino Unido

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