Thin film growth of CaAgAs by molecular beam epitaxy.
J Phys Condens Matter
; 32(43): 435703, 2020 Jul 16.
Article
en En
| MEDLINE
| ID: mdl-32674076
ABSTRACT
We have grown thin films of CaAgAs by molecular beam epitaxy, which was theoretically proposed to be a topological insulator. The temperature dependence of resistivity and the carrier concentration at 4 K were similar to the reported results of bulk samples. However, the magnetoresistance exhibited a steep increase at low magnetic fields, a behavior not observed for bulk samples. This steep increase of resistivity is ascribable to the weak antilocalization effect and provides clues to the nature of the topological surface state of CaAgAs.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
J Phys Condens Matter
Asunto de la revista:
BIOFISICA
Año:
2020
Tipo del documento:
Article
País de afiliación:
Japón