High Performance p-GaN/Oxide Layer/n-GaN Ultraviolet Detector Fabricated by Directly Contacting Method.
J Nanosci Nanotechnol
; 20(12): 7553-7557, 2020 Dec 01.
Article
en En
| MEDLINE
| ID: mdl-32711626
ABSTRACT
High performance p-GaN/oxide layer/n-GaN ultraviolet (UV) photodetector was fabricated in this paper. The UV detector composed of n-GaN and p-GaN film with oxide layer which was constructed by directly contacting way. The detector based on GaN p-GaN/oxide layer/n-GaN structure showed high UV response with fast speed. The results indicated that the fabrication of large-scale GaNbased materials was greatly facilitated with relatively low cost contacting method. Furthermore, it offered a new method to obtain UV detector for GaN-based materials with high performance.
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01-internacional
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MEDLINE
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En
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J Nanosci Nanotechnol
Año:
2020
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Article
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EEUU
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ESTADOS UNIDOS
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ESTADOS UNIDOS DA AMERICA
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EUA
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UNITED STATES
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UNITED STATES OF AMERICA
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USA