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Enhanced Ferroelectric Properties and Insulator-Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VOx-Capped Hf0.5Zr0.5O2 Thin Films.
Zhang, Yan; Fan, Zhen; Wang, Dao; Wang, Jiali; Zou, Zhengmiao; Li, Yushan; Li, Qiang; Tao, Ruiqiang; Chen, Deyang; Zeng, Min; Gao, Xingsen; Dai, Jiyan; Zhou, Guofu; Lu, Xubing; Liu, Jun-Ming.
Afiliación
  • Zhang Y; Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
  • Fan Z; Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
  • Wang D; Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
  • Wang J; Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
  • Zou Z; Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
  • Li Y; Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
  • Li Q; Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
  • Tao R; Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
  • Chen D; Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
  • Zeng M; Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
  • Gao X; Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
  • Dai J; Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
  • Zhou G; Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
  • Lu X; Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
  • Liu JM; Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
ACS Appl Mater Interfaces ; 12(36): 40510-40517, 2020 Sep 09.
Article en En | MEDLINE | ID: mdl-32805812
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2020 Tipo del documento: Article País de afiliación: China
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2020 Tipo del documento: Article País de afiliación: China