Effect of Graphene Doping Level near the Metal Contact Region on Electrical and Photoresponse Characteristics of Graphene Photodetector.

Jung, Jaedong; Park, Honghwi; Won, Heungsup; Choi, Muhan; Lee, Chang-Ju; Park, Hongsik

Jung, Jaedong; Park, Honghwi; Won, Heungsup; Choi, Muhan; Lee, Chang-Ju; Park, Hongsik.

Afiliación

Jung J; School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea.
Park H; School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea.
Won H; School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea.
Choi M; School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea.
Lee CJ; School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea.
Park H; School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea.

Sensors (Basel) ; 20(17)2020 Aug 19.

Article en En | MEDLINE | ID: mdl-32824939

Palabras clave

built-in electric field; doping level difference; graphene; graphene-metal contact; junction barrier height; photodetector

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sensors (Basel) Año: 2020 Tipo del documento: Article Pais de publicación: Suiza

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