Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode.

Alimkhanuly, Batyrbek; Kim, Sanghoek; Kim, Lok-Won; Lee, Seunghyun

Alimkhanuly, Batyrbek; Kim, Sanghoek; Kim, Lok-Won; Lee, Seunghyun.

Afiliación

Alimkhanuly B; Department of Electronic Engineering, Kyung Hee University, Yongin City, Gyeonggi-do 17104, Korea.
Kim S; Department of Electronic Engineering, Kyung Hee University, Yongin City, Gyeonggi-do 17104, Korea.
Kim LW; Department of Computer Science, Kyung Hee University, Yongin City, Gyeonggi-do 17104, Korea.
Lee S; Department of Electronic Engineering, Kyung Hee University, Yongin City, Gyeonggi-do 17104, Korea.

Nanomaterials (Basel) ; 10(9)2020 Aug 20.

Article en En | MEDLINE | ID: mdl-32825304

Palabras clave

EM analysis; VRRAM; device modeling; graphene; memory; sub-nm thin electrode

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nanomaterials (Basel) Año: 2020 Tipo del documento: Article

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