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Development and Application of Resistance Strain Force Sensors.
Zhao, Yinming; Liu, Yang; Li, Yongqian; Hao, Qun.
Afiliación
  • Zhao Y; School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China.
  • Liu Y; Beijing Changcheng Institute of Metrology & Measurement, Beijing 100095, China.
  • Li Y; Key Laboratory of Micro/Nano Systems for Aerospace of Ministry of Education, Northwestern Polytechnical University, Xi'an 710072, China.
  • Hao Q; Key Laboratory of Micro/Nano Systems for Aerospace of Ministry of Education, Northwestern Polytechnical University, Xi'an 710072, China.
Sensors (Basel) ; 20(20)2020 Oct 15.
Article en En | MEDLINE | ID: mdl-33076279
ABSTRACT
Resistance strain force sensors have been applied to monitor the strains in various parts and structures for industrial use. Here, we review the working principles, structural forms, and fabrication processes for resistance strain gauges. In particular, we focus on recent developments in resistance stress transfer for resistance strain force sensors and the creep effect due to sustained loads and/or temperature variations. Various error compensation methods to reduce the creep effect are analyzed to develop a metrology standard for resistance strain force sensors. Additionally, the current status of carbon nanotubes (CNTs), silicon carbide (SiC), gallium nitride (GaN), and other wide band gap semiconductors for a wide range of strain sensors are reviewed. The technical requirements and key issues of resistance strain force sensors for future applications are presented.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sensors (Basel) Año: 2020 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sensors (Basel) Año: 2020 Tipo del documento: Article País de afiliación: China