Your browser doesn't support javascript.
loading
2D Scanning Micromirror with Large Scan Angle and Monolithically Integrated Angle Sensors Based on Piezoelectric Thin Film Aluminum Nitride.
Meinel, Katja; Melzer, Marcel; Stoeckel, Chris; Shaporin, Alexey; Forke, Roman; Zimmermann, Sven; Hiller, Karla; Otto, Thomas; Kuhn, Harald.
Afiliación
  • Meinel K; Center for Microtechnologies, Chemnitz University of Technology, 09111 Chemnitz, Germany.
  • Melzer M; Center for Microtechnologies, Chemnitz University of Technology, 09111 Chemnitz, Germany.
  • Stoeckel C; Center for Microtechnologies, Chemnitz University of Technology, 09111 Chemnitz, Germany.
  • Shaporin A; Fraunhofer Institute for Electronic Nano Systems ENAS, 09126 Chemnitz, Germany.
  • Forke R; Fraunhofer Institute for Electronic Nano Systems ENAS, 09126 Chemnitz, Germany.
  • Zimmermann S; Fraunhofer Institute for Electronic Nano Systems ENAS, 09126 Chemnitz, Germany.
  • Hiller K; Center for Microtechnologies, Chemnitz University of Technology, 09111 Chemnitz, Germany.
  • Otto T; Fraunhofer Institute for Electronic Nano Systems ENAS, 09126 Chemnitz, Germany.
  • Kuhn H; Center for Microtechnologies, Chemnitz University of Technology, 09111 Chemnitz, Germany.
Sensors (Basel) ; 20(22)2020 Nov 18.
Article en En | MEDLINE | ID: mdl-33218078
ABSTRACT
A 2D scanning micromirror with piezoelectric thin film aluminum nitride (AlN), separately used as actuator and sensor material, is presented. For endoscopic applications, such as fluorescence microscopy, the devices have a mirror plate diameter of 0.7 mm with a 4 mm2 chip footprint. After an initial design optimization procedure, two micromirror designs were realized. Different spring parameters for x- and y-tilt were chosen to generate spiral (Design 1) or Lissajous (Design 2) scan patterns. An additional layout, with integrated tilt angle sensors, was introduced (Design 1-S) to enable a closed-loop control. The micromirror devices were monolithically fabricated in 150 mm silicon-on-insulator (SOI) technology. Si (111) was used as the device silicon layer to support a high C-axis oriented growth of AlN. The fabricated micromirror devices were characterized in terms of their scanning and sensor characteristics in air. A scan angle of 91.2° was reached for Design 1 at 13 834 Hz and 50 V. For Design 2 a scan angle of 92.4° at 12 060 Hz, and 123.9° at 13 145 Hz, was reached at 50 V for the x- and y-axis, respectively. The desired 2D scan patterns were successfully generated. A sensor angle sensitivity of 1.9 pC/° was achieved.
Palabras clave

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sensors (Basel) Año: 2020 Tipo del documento: Article País de afiliación: Alemania

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sensors (Basel) Año: 2020 Tipo del documento: Article País de afiliación: Alemania