Metrological Suitability of Functionalized Epitaxial Graphene.

Rigosi, Albert F; Kruskopf, Mattias; Panna, Alireza R; Payagala, Shamith U; Jarrett, Dean G; Newell, David B; Elmquist, Randolph E

Rigosi, Albert F; Kruskopf, Mattias; Panna, Alireza R; Payagala, Shamith U; Jarrett, Dean G; Newell, David B; Elmquist, Randolph E.

Afiliación

Rigosi AF; National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA.
Kruskopf M; National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA.
Panna AR; University of Maryland, Joint Quantum Institute, College Park, MD, 20742, USA.
Payagala SU; Physikalisch-Technische Bundesanstalt, Department of Electrical Quantum Metrology, Braunschweig 38116.
Jarrett DG; National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA.
Newell DB; National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA.
Elmquist RE; National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA.

IEEE Trans Instrum Meas ; 12020.

Article en En | MEDLINE | ID: mdl-33335332

Palabras clave

carrier density; epitaxial graphene; functionalization; quantized Hall resistance

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: IEEE Trans Instrum Meas Año: 2020 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos

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