Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor.

Dong, Jianqi; Chen, Liang; Yang, Yuqing; Wang, Xingfu

Dong, Jianqi; Chen, Liang; Yang, Yuqing; Wang, Xingfu.

Afiliación

Dong J; Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, China.
Chen L; School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
Yang Y; Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, China.
Wang X; Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, China.

Beilstein J Nanotechnol ; 11: 1847-1853, 2020.

Article en En | MEDLINE | ID: mdl-33364143

Palabras clave

AlGaN/AlN/GaN nanowires; flexible; piezotronic effect; strain sensors; strain tests; top-down method

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Beilstein J Nanotechnol Año: 2020 Tipo del documento: Article País de afiliación: China Pais de publicación: Alemania

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