Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode.

Kim, Tae-Hyeon; Jang, Won-Ho; Yim, Jun-Hyeok; Cha, Ho-Young

Kim, Tae-Hyeon; Jang, Won-Ho; Yim, Jun-Hyeok; Cha, Ho-Young.

Afiliación

Kim TH; School of Electrical and Electronic Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Korea.
Jang WH; School of Electrical and Electronic Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Korea.
Yim JH; School of Electrical and Electronic Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Korea.
Cha HY; School of Electrical and Electronic Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Korea.

Micromachines (Basel) ; 12(3)2021 Mar 10.

Article en En | MEDLINE | ID: mdl-33802182

Palabras clave

AlGaN/GaN heterojunction; p-GaN gate; rectifying electrode; unidirectional operation

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2021 Tipo del documento: Article Pais de publicación: Suiza

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