High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi<sub>2</sub>Te<sub>3</sub> Nanowires.

Yoo, Tae Jin; Kim, Wan Sik; Chang, Kyoung Eun; Kim, Cihyun; Kwon, Min Gyu; Jo, Ji Young; Lee, Byoung Hun

High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi₂Te₃ Nanowires.

Yoo, Tae Jin; Kim, Wan Sik; Chang, Kyoung Eun; Kim, Cihyun; Kwon, Min Gyu; Jo, Ji Young; Lee, Byoung Hun.

Afiliación

Yoo TJ; Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk 37673, Korea.
Kim WS; School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Korea.
Chang KE; School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Korea.
Kim C; Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk 37673, Korea.
Kwon MG; School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Korea.
Jo JY; School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Korea.
Lee BH; Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk 37673, Korea.

Nanomaterials (Basel) ; 11(3)2021 Mar 17.

Article en En | MEDLINE | ID: mdl-33802969

ABSTRACT

ABSTRACT

A graphene photodetector decorated with Bi2Te3 nanowires (NWs) with a high gain of up to 3 × 104 and wide bandwidth window (400-2200 nm) has been demonstrated. The photoconductive gain was improved by two orders of magnitude compared to the gain of a photodetector using a graphene/Bi2Te3 nanoplate junction. Additionally, the position of photocurrent generation was investigated at the graphene/Bi2Te3 NWs junction. Eventually, with low bandgap Bi2Te3 NWs and a graphene junction, the photoresponsivity improved by 200% at 2200 nm (~0.09 mA/W).

Palabras clave

Bi2Te3 nanowires; chemical vapor deposition (CVD) graphene; graphene photodetector; infrared photodetector; photodetector

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2021 Tipo del documento: Article