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Possible Topological Hall Effect above Room Temperature in Layered Cr1.2Te2 Ferromagnet.
Huang, Meng; Gao, Lei; Zhang, Ying; Lei, Xunyong; Hu, Guojing; Xiang, Junxiang; Zeng, Hualing; Fu, Xuewen; Zhang, Zengming; Chai, Guozhi; Peng, Yong; Lu, Yalin; Du, Haifeng; Chen, Gong; Zang, Jiadong; Xiang, Bin.
Afiliación
  • Huang M; Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science and Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026, China.
  • Gao L; Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, P.R. China.
  • Zhang Y; Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science and Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026, China.
  • Lei X; Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science and Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026, China.
  • Hu G; Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science and Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026, China.
  • Xiang J; Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science and Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026, China.
  • Zeng H; Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science and Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026, China.
  • Fu X; School of Physics, Nankai University, Tianjin 300071 China.
  • Zhang Z; The Center for Physical Experiments, University of Science and Technology of China, Hefei, Anhui 230026, China.
  • Chai G; Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, P.R. China.
  • Peng Y; Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, P.R. China.
  • Lu Y; Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science and Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026, China.
  • Du H; Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, China.
  • Chen G; High Magnetic Field Laboratory, Chinese Academy of Science (CAS), Hefei, Anhui Province 230031, China.
  • Zang J; Physics Department, Georgetown University, Washington, DC 20057, United States.
  • Xiang B; Department of Physics and Materials Science Program, University of New Hampshire, Durham, New Hampshire 03824, United States.
Nano Lett ; 21(10): 4280-4286, 2021 May 26.
Article en En | MEDLINE | ID: mdl-33979154
ABSTRACT
Topological Hall effect (THE) has been used as a powerful tool to unlock spin chirality in novel magnetic materials. Recent focus has been widely paid to THE and possible chiral spin textures in two-dimensional (2D) layered magnetic materials. However, the room-temperature THE has been barely reported in 2D materials, which hinders its practical applications in 2D spintronics. In this paper, we report a possible THE signal featuring antisymmetric peaks in a wide temperature window up to 320 K in Cr1.2Te2, a new quasi-2D ferromagnetic material. The temperature, thickness, and magnetic field dependences of the THE lead to potential spin chirality origin that is associated with the spin canting under external magnetic fields. Our work holds promise for practical applications in future chiral spin-based vdW spintronic devices.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2021 Tipo del documento: Article País de afiliación: China
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2021 Tipo del documento: Article País de afiliación: China