High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate.

Huang, Yu-Chun; Chiu, Hsien-Chin; Kao, Hsuan-Ling; Wang, Hsiang-Chun; Liu, Chia-Hao; Huang, Chong-Rong; Chen, Si-Wen

Huang, Yu-Chun; Chiu, Hsien-Chin; Kao, Hsuan-Ling; Wang, Hsiang-Chun; Liu, Chia-Hao; Huang, Chong-Rong; Chen, Si-Wen.

Afiliación

Huang YC; Department of Electronics Engineering, Chang Gung University, Taoyuan 33324, Taiwan.
Chiu HC; Department of Electronics Engineering, Chang Gung University, Taoyuan 33324, Taiwan.
Kao HL; Department of Electronics Engineering, Chang Gung University, Taoyuan 33324, Taiwan.
Wang HC; Department of Electronics Engineering, Chang Gung University, Taoyuan 33324, Taiwan.
Liu CH; Department of Electronics Engineering, Chang Gung University, Taoyuan 33324, Taiwan.
Huang CR; Department of Electronics Engineering, Chang Gung University, Taoyuan 33324, Taiwan.
Chen SW; Department of Electronics Engineering, Chang Gung University, Taoyuan 33324, Taiwan.

Micromachines (Basel) ; 12(5)2021 May 01.

Article en En | MEDLINE | ID: mdl-34062908

Palabras clave

low-resistance SiC substrate; normally off; p-GaN gate HEMT; temperature

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2021 Tipo del documento: Article País de afiliación: Taiwán

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