Signature of strong localization and crossover conduction processes in doped ZnO thin films: synergetic effect of doping fraction and dense electronic excitations.

Gupta, Himanshi; Singh, Jitendra; Umapathy, G R; Soni, Vijay; Ojha, S; Kar, Soumen; Singh, Fouran

Gupta, Himanshi; Singh, Jitendra; Umapathy, G R; Soni, Vijay; Ojha, S; Kar, Soumen; Singh, Fouran.

Afiliación

Gupta H; Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India.
Singh J; Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India.
Umapathy GR; Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan.
Soni V; Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India.
Ojha S; Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India.
Kar S; Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India.
Singh F; Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India.

J Phys Condens Matter ; 33(31)2021 Jun 14.

Article en En | MEDLINE | ID: mdl-34132205

Palabras clave

ES-VRH; Mott-VRH; doped ZnO; strong localization; swift heavy ions

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Phys Condens Matter Asunto de la revista: BIOFISICA Año: 2021 Tipo del documento: Article País de afiliación: India Pais de publicación: Reino Unido

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