Your browser doesn't support javascript.
loading
Improved Efficiency and Lifetime of Deep-Blue Hyperfluorescent Organic Light-Emitting Diode using Pt(II) Complex as Phosphorescent Sensitizer.
Nam, Sungho; Kim, Ji Whan; Bae, Hye Jin; Maruyama, Yusuke Makida; Jeong, Daun; Kim, Joonghyuk; Kim, Jong Soo; Son, Won-Joon; Jeong, Hyein; Lee, Jaesang; Ihn, Soo-Ghang; Choi, Hyeonho.
Afiliación
  • Nam S; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon-si, Gyeonggi-do, 16678, Republic of Korea.
  • Kim JW; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon-si, Gyeonggi-do, 16678, Republic of Korea.
  • Bae HJ; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon-si, Gyeonggi-do, 16678, Republic of Korea.
  • Maruyama YM; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon-si, Gyeonggi-do, 16678, Republic of Korea.
  • Jeong D; Data and Information Technology Center, Samsung Electronics Co., Ltd., 1 Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, 18448, Republic of Korea.
  • Kim J; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon-si, Gyeonggi-do, 16678, Republic of Korea.
  • Kim JS; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon-si, Gyeonggi-do, 16678, Republic of Korea.
  • Son WJ; Data and Information Technology Center, Samsung Electronics Co., Ltd., 1 Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, 18448, Republic of Korea.
  • Jeong H; Display Research Center, Samsung Display Co., 1 Samsung-ro, Yongin-si, Gyeonggi-do, 17113, Republic of Korea.
  • Lee J; Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
  • Ihn SG; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon-si, Gyeonggi-do, 16678, Republic of Korea.
  • Choi H; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon-si, Gyeonggi-do, 16678, Republic of Korea.
Adv Sci (Weinh) ; 8(16): e2100586, 2021 Aug.
Article en En | MEDLINE | ID: mdl-34137208
Although the organic light-emitting diode (OLED) has been successfully commercialized, the development of deep-blue OLEDs with high efficiency and long lifetime remains a challenge. Here, a novel hyperfluorescent OLED that incorporates the Pt(II) complex (PtON7-dtb) as a phosphorescent sensitizer and a hydrocarbon-based and multiple resonance-based fluorophore as an emitter (TBPDP and ν-DABNA) in the device emissive layer (EML), is proposed. Such an EML system can promote efficient energy transfer from the triplet excited states of the sensitizer to the singlet excited states of the fluorophore, thus significantly improving the efficiency and lifetime of the device. As a result, a deep-blue hyperfluorescent OLED using a multiple resonance-based fluorophore (ν-DABNA) with Commission Internationale de L'Eclairage chromaticity coordinate y below 0.1 is demonstrated, which attains a narrow full width at half maximum of ≈17 nm, fourfold increased maximum current efficiency of 48.9 cd A-1 , and 19-fold improved half-lifetime of 253.8 h at 1000 cd m-2 compared to a conventional phosphorescent OLED. The findings can lead to better understanding of the hyperfluorescent OLEDs with high performance.
Palabras clave

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Año: 2021 Tipo del documento: Article Pais de publicación: Alemania

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Año: 2021 Tipo del documento: Article Pais de publicación: Alemania