Designing an Ultrathin Film Spectrometer Based on III-Nitride Light-Absorbing Nanostructures.
Micromachines (Basel)
; 12(7)2021 Jun 28.
Article
en En
| MEDLINE
| ID: mdl-34203175
ABSTRACT
In this paper, a spectrometer design enabling an ultrathin form factor is proposed. Local strain engineering in group III-nitride semiconductor nanostructured light-absorbing elements enables the integration of a large number of photodetectors on the chip exhibiting different absorption cut-off wavelengths. The introduction of a simple cone-shaped back-reflector at the bottom side of the substrate enables a high light-harvesting efficiency design, which also improves the accuracy of spectral reconstruction. The cone-shaped back-reflector can be readily fabricated using mature patterned sapphire substrate processes. Our design was validated via numerical simulations with experimentally measured photodetector responsivities as the input. A light-harvesting efficiency as high as 60% was achieved with five InGaN/GaN multiple quantum wells for the visible wavelengths.
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1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Micromachines (Basel)
Año:
2021
Tipo del documento:
Article
País de afiliación:
Estados Unidos