Ultrafast and Highly Stable Photodetectors Based on p-GeSe/n-ReSe<sub>2</sub> Heterostructures.

Afzal, Amir Muhammad; Iqbal, Muhammad Zahir; Dastgeer, Ghulam; Nazir, Ghazanfar; Eom, Jonghwa

Ultrafast and Highly Stable Photodetectors Based on p-GeSe/n-ReSe₂ Heterostructures.

Afzal, Amir Muhammad; Iqbal, Muhammad Zahir; Dastgeer, Ghulam; Nazir, Ghazanfar; Eom, Jonghwa.

Afiliación

Afzal AM; Department of Physics, Riphah International University, 13-km Raiwind Road, Lahore 54000, Pakistan.
Iqbal MZ; Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul 05006, Korea.
Dastgeer G; Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan.
Nazir G; Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul 05006, Korea.
Eom J; Department of Chemistry, Inha University, 100 Inharo, Incheon 22212, Korea.

ACS Appl Mater Interfaces ; 13(40): 47882-47894, 2021 Oct 13.

Article en En | MEDLINE | ID: mdl-34605233

Palabras clave

broadband; infrared photodetector; interlayer transition; intralayer band transition; rectification ratio; van der Waals

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2021 Tipo del documento: Article País de afiliación: Pakistán Pais de publicación: Estados Unidos

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