A nanopillar-modified high-sensitivity asymmetric graphene-GaN photodetector.

Liu, Chang; Li, Xiaodong; Hu, Tiangui; Zhu, Wenkai; Yan, Faguang; Wu, Tiesheng; Wang, Kaiyou; Zhao, Lixia

Liu, Chang; Li, Xiaodong; Hu, Tiangui; Zhu, Wenkai; Yan, Faguang; Wu, Tiesheng; Wang, Kaiyou; Zhao, Lixia.

Afiliación

Liu C; State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Li X; State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. lxzhao@semi.ac.cn.
Hu T; State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Zhu W; State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Yan F; State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Wu T; Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing, Guangxi, China.
Wang K; State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Zhao L; State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.

Nanoscale ; 13(41): 17512-17520, 2021 Oct 28.

Article en En | MEDLINE | ID: mdl-34652361

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Diagnostic_studies Idioma: En Revista: Nanoscale Año: 2021 Tipo del documento: Article País de afiliación: China Pais de publicación: Reino Unido

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