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Terahertz Field-Induced Reemergence of Quenched Photoluminescence in Quantum Dots.
Shi, Jiaojian; Gao, Frank Y; Zhang, Zhuquan; Utzat, Hendrik; Barotov, Ulugbek; Farahvash, Ardavan; Han, Jinchi; Deschamps, Jude; Baik, Chan-Wook; Cho, Kyung Sang; Bulovic, Vladimir; Willard, Adam P; Baldini, Edoardo; Gedik, Nuh; Bawendi, Moungi G; Nelson, Keith A.
Afiliación
  • Shi J; Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Gao FY; Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Zhang Z; Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Utzat H; Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Barotov U; Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Farahvash A; Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Han J; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Deschamps J; Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Baik CW; Photonic Device Lab, Samsung Advanced Institute of Technology, 16678 Suwon, Republic of Korea.
  • Cho KS; Photonic Device Lab, Samsung Advanced Institute of Technology, 16678 Suwon, Republic of Korea.
  • Bulovic V; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Willard AP; Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Baldini E; Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Gedik N; Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Bawendi MG; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Nelson KA; Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Nano Lett ; 22(4): 1718-1725, 2022 Feb 23.
Article en En | MEDLINE | ID: mdl-35142222
The continuous and concerted development of colloidal quantum dot light-emitting diodes over the past two decades has established them as a bedrock technology for the next generation of displays. However, a fundamental issue that limits the performance of these devices is the quenching of photoluminescence due to excess charges from conductive charge transport layers. Although device designs have leveraged various workarounds, doing so often comes at the cost of limiting efficient charge injection. Here we demonstrate that high-field terahertz (THz) pulses can dramatically brighten quenched QDs on metallic surfaces, an effect that persists for minutes after THz irradiation. This phenomenon is attributed to the ability of the THz field to remove excess charges, thereby reducing trion and nonradiative Auger recombination. Our findings show that THz technologies can be used to suppress and control such undesired nonradiative decay, potentially in a variety of luminescent materials for future device applications.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2022 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2022 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos