Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on In x Al1-x As Stressors.

Clavel, Michael B; Liu, Jheng-Sin; Bodnar, Robert J; Hudait, Mantu K

Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on In _x Al_1-x As Stressors.

Clavel, Michael B; Liu, Jheng-Sin; Bodnar, Robert J; Hudait, Mantu K.

Afiliación

Clavel MB; Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, United States.
Liu JS; Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, United States.
Bodnar RJ; Fluids Research Laboratory, Department of Geosciences, Virginia Tech, Blacksburg, Virginia 24061, United States.
Hudait MK; Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, United States.

ACS Omega ; 7(7): 5946-5953, 2022 Feb 22.

Article en En | MEDLINE | ID: mdl-35224355

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Omega Año: 2022 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos

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