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Enhanced Switching Reliability of Sol-Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field.
Kim, Do-Won; Kim, Hyeon-Joong; Lee, Won-Yong; Kim, Kyoungdu; Lee, Sin-Hyung; Bae, Jin-Hyuk; Kang, In-Man; Kim, Kwangeun; Jang, Jaewon.
Afiliación
  • Kim DW; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea.
  • Kim HJ; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea.
  • Lee WY; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea.
  • Kim K; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea.
  • Lee SH; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea.
  • Bae JH; School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea.
  • Kang IM; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea.
  • Kim K; School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea.
  • Jang J; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea.
Materials (Basel) ; 15(5)2022 Mar 05.
Article en En | MEDLINE | ID: mdl-35269170
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2022 Tipo del documento: Article Pais de publicación: Suiza
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2022 Tipo del documento: Article Pais de publicación: Suiza