Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction.

Dzhigaev, Dmitry; Svensson, Johannes; Krishnaraja, Abinaya; Zhu, Zhongyunshen; Ren, Zhe; Liu, Yi; Kalbfleisch, Sebastian; Björling, Alexander; Lenrick, Filip; Balogh, Zoltan Imre; Hammarberg, Susanna; Wallentin, Jesper; Timm, Rainer; Wernersson, Lars-Erik; Mikkelsen, Anders

Dzhigaev, Dmitry; Svensson, Johannes; Krishnaraja, Abinaya; Zhu, Zhongyunshen; Ren, Zhe; Liu, Yi; Kalbfleisch, Sebastian; Björling, Alexander; Lenrick, Filip; Balogh, Zoltan Imre; Hammarberg, Susanna; Wallentin, Jesper; Timm, Rainer; Wernersson, Lars-Erik; Mikkelsen, Anders.

Afiliación

Dzhigaev D; Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden. dmitry.dzhigaev@sljus.lu.se.
Svensson J; Electrical and Information Technology, Department of Engineering, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
Krishnaraja A; Electrical and Information Technology, Department of Engineering, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
Zhu Z; Electrical and Information Technology, Department of Engineering, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
Ren Z; Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden. dmitry.dzhigaev@sljus.lu.se.
Liu Y; Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden. dmitry.dzhigaev@sljus.lu.se.
Kalbfleisch S; MAX IV Laboratory, Lund University, 22100 Lund, Sweden.
Björling A; MAX IV Laboratory, Lund University, 22100 Lund, Sweden.
Lenrick F; Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden. dmitry.dzhigaev@sljus.lu.se.
Balogh ZI; DTU CEN, DTU, Fysikvej 2800, Lyngby, Denmark.
Hammarberg S; Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden. dmitry.dzhigaev@sljus.lu.se.
Wallentin J; Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden. dmitry.dzhigaev@sljus.lu.se.
Timm R; Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden. dmitry.dzhigaev@sljus.lu.se.
Wernersson LE; Electrical and Information Technology, Department of Engineering, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
Mikkelsen A; Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden. dmitry.dzhigaev@sljus.lu.se.

Nanoscale ; 14(13): 5247, 2022 Mar 31.

Article en En | MEDLINE | ID: mdl-35319063

ABSTRACT

ABSTRACT

Correction for 'Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction' by Dmitry Dzhigaev et al., Nanoscale, 2020, 12, 14487-14493, DOI 10.1039/D0NR02260H.

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2022 Tipo del documento: Article País de afiliación: Suecia